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BUJ100,126
datasheet
by NXP Semiconductors
Description
Silicon Diffused Power Transistor - I<sub>C (DC)</sub>: 1 A; I<sub>C (SAT)</sub>: 0.5 A; tf<sub>(max)</sub>: 0.05s; V<sub>CESM</sub>: 700 V; Package: week 5, 2005
Datasheet Type
Original
RoHS
Yes
Pb Free
Unknown
Lifecycle
Transferred
Price & Stock
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BUJ100,126
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