BTH151S-650R,118 datasheet
by NXP Semiconductors
- Thyristor High Repetitive Surge - I<sub>GT</sub>: 15 mA; I<sub>T</sub> (R<sub>MS</sub>): 12 A; V<sub>DRM</sub>: 650 V; Package: week 1, 2005
- Original
- Yes
- Unknown
- Transferred
- Find it at Findchips.com
