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    Part Img BTA312B-800E,118 datasheet by NXP Semiconductors

    • 12 A Three-quadrant triacs high commutation - I<sub>GT</sub>: 10 mA; I<sub>T</sub> (R<sub>MS</sub>): 12.0 A; V<sub>DRM</sub>: 800 V; Package: SOT404 (D2PAK); Container: Tape reel smd
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
    • 8541.30.00.80
    • 8541.30.00.80
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    BTA312B-800E,118 datasheet preview

    BTA312B-800E,118 Frequently Asked Questions (FAQs)

    • NXP recommends a thermal pad on the bottom of the device, connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2 oz copper thickness is recommended, and the thermal pad should be connected to a ground plane to reduce thermal resistance.
    • To ensure reliable operation at high temperatures, it's essential to follow the recommended derating curves for voltage and current. Additionally, ensure good thermal design, use a heat sink if necessary, and consider using a thermistor or thermal sensor to monitor the device temperature.
    • The maximum allowed voltage on the gate pin is ±20V, but it's recommended to keep it within ±15V to ensure reliable operation and prevent damage to the device.
    • Yes, the BTA312B-800E,118 can be used in resonant converter designs, but it's essential to ensure that the device is operated within its safe operating area (SOA) and that the resonant frequency is within the device's specified frequency range.
    • To protect the device from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) on the anode-cathode voltage, and consider adding a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.
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