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    Part Img BTA312B-600D,118 datasheet by NXP Semiconductors

    • 12 A Three-quadrant triacs high commutation - I<sub>GT</sub>: 5 mA; I<sub>T</sub> (R<sub>MS</sub>): 12.0 A; V<sub>DRM</sub>: 600 V; Package: SOT404 (D2PAK); Container: Tape reel smd
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
    • 8541.30.00.80
    • 8541.30.00.80
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    BTA312B-600D,118 datasheet preview

    BTA312B-600D,118 Frequently Asked Questions (FAQs)

    • NXP recommends a PCB layout with a large copper area connected to the tab of the device to improve thermal performance. A minimum of 2 oz copper thickness is recommended, and the copper area should be connected to a heat sink or a thermal pad.
    • To ensure reliable operation at high temperatures, it's essential to follow the recommended derating curves for the device. Additionally, ensure good thermal design, use a heat sink if necessary, and avoid exceeding the maximum junction temperature (Tj) of 150°C.
    • The maximum allowed voltage on the gate pin is ±20V, but it's recommended to keep it within ±15V to ensure reliable operation and prevent damage to the device.
    • Yes, the BTA312B-600D,118 is suitable for switching inductive loads, but it's essential to ensure that the device is properly snubbed to prevent voltage spikes and oscillations. A suitable snubber circuit should be used to limit the voltage rise time (dv/dt) to less than 500 V/μs.
    • The recommended gate current for reliable triggering is typically in the range of 100-200 mA, but it may vary depending on the specific application and circuit design. It's essential to consult the datasheet and application notes for more information.
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