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    BSS123W-7 datasheet by Diodes Incorporated

    • TRANS MOSFET N-CH 100V 0.17A 3SOT-323 T/R
    • Original
    • No
    • No
    • Obsolete
    • EAR99
    • 8541.21.00.95
    • 8541.21.00.80
    • Find it at Findchips.com

    BSS123W-7 datasheet preview

    BSS123W-7 Frequently Asked Questions (FAQs)

    • A good PCB layout for the BSS123W-7 should minimize lead inductance and ensure a low-impedance path for the drain and source pins. A recommended layout is to place the device close to the power source, use wide traces for the drain and source pins, and keep the gate pin trace as short as possible.
    • To ensure proper biasing, the gate-source voltage (Vgs) should be within the recommended range of 2.5V to 10V. The drain-source voltage (Vds) should be within the recommended range of 12V to 30V. Additionally, the device should be operated within the recommended temperature range of -55°C to 150°C.
    • The BSS123W-7 has a thermal resistance (RθJA) of 60°C/W. To ensure proper heat dissipation, a heat sink or thermal pad can be used. The device should be mounted on a PCB with a thermal via or a copper plane to dissipate heat. The ambient temperature should be kept below 70°C to prevent overheating.
    • Yes, the BSS123W-7 is suitable for high-frequency switching applications up to 100 kHz. However, the device's performance may degrade at higher frequencies due to increased switching losses and parasitic capacitance. Proper PCB layout and decoupling capacitors can help minimize these effects.
    • The BSS123W-7 has an ESD rating of 2 kV human body model (HBM) and 150 V machine model (MM). To protect the device from ESD, handle the device by the body or use an ESD wrist strap or mat. Avoid touching the device's pins or exposing it to static-prone environments.
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