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    Part Img BSH114,215 datasheet by NXP Semiconductors

    • N-channel enhancement mode field effect transistor - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.85 A; Q<sub>gd</sub> (typ): 2.1 nC; R<sub>DS(on)</sub>: 500@10V mOhm; V<sub>DS</sub>max: 100 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
    • 8541.29.00.75
    • 8541.29.00.80
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    BSH114,215 datasheet preview

    BSH114,215 Frequently Asked Questions (FAQs)

    • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the layout symmetrical and avoid vias under the device. Use a 50-ohm microstrip transmission line for the RF output.
    • Use a voltage regulator to maintain a stable 3.3V supply. Ensure the bias voltage (VCC) is decoupled with a 10uF capacitor and a 100nF capacitor in parallel. Add a 1kΩ resistor in series with the bias pin to prevent oscillations.
    • The recommended input power level is -20 dBm to 0 dBm. Exceeding this range may cause compression or distortion. Use an attenuator or a variable attenuator to adjust the input power level.
    • Use a low-noise amplifier (LNA) in front of the BSH114,215 to improve the noise figure. Optimize the input matching network for maximum gain and minimum noise figure. Use a high-Q inductor and a low-loss capacitor in the output matching network.
    • The maximum operating temperature for the BSH114,215 is 85°C. Ensure proper heat sinking and thermal management to prevent overheating.
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