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    BSH111T/R datasheet by NXP Semiconductors

    • N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.335 A; Q<sub>gd</sub> (typ): 0.5 nC; R<sub>DS(on)</sub>: 4000@4.5V5000@2.5V mOhm; V<sub>DS</sub>max: 55 V
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    BSH111T/R datasheet preview

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