BLS2933-100,112 datasheet
by NXP Semiconductors
- Microwave power LDMOS transistor - Application: S-band Radar ; Description: S-Band Radar RF POWER Transistor ; Duty cycle: 12 %; Efficiency: 40 %; Frequency: 2900 - 3300 MHz; Load power: 100 W; Operating voltage: 32 VDC; Power gain: 8 dB; Pulse width: 200 us; Package: SOT502A (LDMOST); Container: Blister pack
- Original
- Yes
- Unknown
- Obsolete
-
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