BLS2731-50,114 datasheet
by NXP Semiconductors
- Microwave power transistor - Application: S-band Radar ; Description: S-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 40 %; Frequency: 2700 - 3100 MHz; Load power: 60 W; Operating voltage: 40 VDC; Power gain: 9 dB; Pulse width: 100 us; Package: SOT422A (CDFM2); Container: Blister pack
- Original
- Unknown
- Unknown
- Obsolete
- Find it at Findchips.com
