BLS2731-20,114 datasheet by NXP Semiconductors

Description Microwave power transistor - Application: S-band Radar ; Description: S-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 40 %; Frequency: 2700 - 3100 MHz; Load power: 25 W; Operating voltage: 40 VDC; Power gain: 10 dB; Pulse width: 100 us; Package: SOT445C (CDFM2); Container: Blister pack
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Obsolete
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934045800114

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