BLS2731-110,114 datasheet by NXP Semiconductors

Description Microwave power transistor - Application: S-band Radar ; Description: S-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 40 %; Frequency: 2700 - 3100 MHz; Load power: 110 W; Operating voltage: 40 VDC; Power gain: 8 dB; Pulse width: 100 us; Package: SOT423A (CDFM2); Container: Blister pack
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Obsolete
Price & Stock
Powered by Findchips

Equivalent Parts !
Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

934045780114

BLS2731-110,114 datasheet preview

Download Datasheet