BLL1214-250,112 datasheet by NXP Semiconductors

Description L-band radar LDMOS transistor - Application: L-band Radar ; Description: L-Band Radar LDMOS RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 50 %; Frequency: 1200 - 1400 MHz; Load power: 250 W; Operating voltage: 36 VDC; Power gain: 13 dB; Pulse width: 1000 us; Package: SOT502A (LDMOST); Container: Blister pack
Datasheet Type Original
RoHS Yes
Pb Free Unknown
Lifecycle Obsolete
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BLL1214-250

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