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    BLF6G22-180PN datasheet by NXP Semiconductors

    • Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27.5 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 50 W; Package material: SOT539A ; Power gain: 17.5 dB
    • Original
    • Yes
    • Yes
    • Obsolete
    • EAR99
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    BLF6G22-180PN datasheet preview

    BLF6G22-180PN Frequently Asked Questions (FAQs)

    • NXP provides a recommended PCB layout in the application note AN11570, which includes guidelines for component placement, trace routing, and grounding to minimize parasitic effects and ensure optimal performance.
    • The biasing network depends on the specific application and operating frequency. NXP provides a biasing network design guide in the application note AN11570, which includes examples and calculations for different scenarios.
    • The maximum safe operating temperature for the BLF6G22-180PN is 150°C, as specified in the datasheet. However, it's recommended to operate the device within the recommended operating temperature range of -40°C to 125°C for optimal performance and reliability.
    • The BLF6G22-180PN requires a high voltage supply (up to 50V) and can handle high current (up to 18A). It's essential to use a suitable power supply and ensure proper thermal management to prevent overheating and damage to the device.
    • The BLF6G22-180PN is sensitive to electrostatic discharge (ESD). It's essential to follow proper ESD handling and protection procedures, such as using ESD-safe equipment, wrist straps, and packaging, to prevent damage to the device.
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