BLF6G20LS-110,118 datasheet by NXP Semiconductors

Description Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 31 %; Frequency band: 1800 - 2000 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT502B ; Power gain: 19 dB; Package: SOT502B (LDMOST); Container: Reel Pack, SMD, 13"
Datasheet Type Original
RoHS Yes
Pb Free Unknown
Lifecycle Transferred
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934060896112 BLF6G20LS-110,112 BLF6G20LS-110,112 BLF6G20LS-110

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