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    Part Img BLF404,115 datasheet by NXP Semiconductors

    • UHF power MOS transistor - Application: Broadcast, PMR and UHF Communication transmitters ; Description: UHF VDMOS RF POWER Transistor ; Efficiency: 55 %; Frequency: 500 MHz; Load power: 4 W; Operating voltage: 12.5 VDC; Power gain: 11.5 dB; Package: SOT409A (CDIP8); Container: Tape reel smd
    • Original
    • Yes
    • Unknown
    • Obsolete
    • EAR99
    • Find it at Findchips.com

    BLF404,115 datasheet preview

    BLF404,115 Frequently Asked Questions (FAQs)

    • The maximum power dissipation of the BLF404,115 is 100 W, but it can be derated to 50 W for high-reliability applications.
    • To optimize thermal performance, ensure good heat sinking, use a thermal interface material, and keep the device away from heat sources. A thermal resistance of 1.5 K/W or lower is recommended.
    • Use a 4-layer PCB with a solid ground plane, keep the RF signal traces short and away from the DC power traces, and use a common mode choke to reduce EMI.
    • To prevent oscillation, ensure the device is properly biased, use a stabilizing network, and add a series resistor to the gate of the transistor. Also, avoid using a high-gain transistor in the amplifier stage.
    • The maximum operating frequency of the BLF404,115 is 4 GHz, but it can be used up to 6 GHz with reduced performance.
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