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    Part Img BLA1011-2,112 datasheet by NXP Semiconductors

    • BLA1011-2 - TRANSISTOR L BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-3, FET RF Power
    • Original
    • Yes
    • Unknown
    • Obsolete
    • EAR99
    • 8541.29.00.75
    • 8541.29.00.80
    • Find it at Findchips.com

    BLA1011-2,112 datasheet preview

    BLA1011-2,112 Frequently Asked Questions (FAQs)

    • NXP provides a recommended PCB layout in the application note AN11529, which includes guidelines for component placement, routing, and thermal management to ensure optimal performance and minimize electromagnetic interference (EMI).
    • The datasheet provides a list of recommended external components, including capacitors, resistors, and inductors. Additionally, NXP's application note AN11529 provides guidance on component selection and calculation of values for specific applications.
    • The BLA1011-2,112 is rated for operation from -40°C to +125°C, but the maximum operating temperature range may vary depending on the specific application and environmental conditions. It's essential to consult the datasheet and application notes for specific guidance.
    • NXP recommends using an external overvoltage protection circuit, such as a voltage supervisor or a dedicated OVP IC, to protect the BLA1011-2,112 from voltage transients and surges. The application note AN11529 provides guidance on OVP circuit design and implementation.
    • NXP recommends following the JEDEC standard J-STD-020D for soldering the BLA1011-2,112. The application note AN11529 provides additional guidance on soldering and assembly processes to ensure reliable operation and minimize defects.
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