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    BFG425WT/R datasheet by NXP Semiconductors

    • TRANS GP BJT NPN 4.5V 0.03A 4S
    • Original
    • Yes
    • Unknown
    • Obsolete
    • EAR99
    • 8541.21.00.75
    • 8541.21.00.80
    • Find it at Findchips.com
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    BFG425WT/R datasheet preview

    BFG425WT/R Frequently Asked Questions (FAQs)

    • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the RF signal traces short and away from the power plane. Use a via stitching pattern to connect the ground plane to the heat sink.
    • Use a resistive divider network to set the bias voltage. Choose R1 and R2 values to achieve a voltage drop of around 1V across the base-emitter junction. Ensure the bias current is limited to 10mA to prevent overheating.
    • The maximum safe operating temperature for the BFG425WT/R is 150°C. However, it's recommended to keep the junction temperature below 125°C to ensure reliable operation and prevent thermal runaway.
    • Use a heat sink with a thermal resistance of less than 10°C/W. Ensure good thermal contact between the device and the heat sink. Implement a thermal monitoring and shutdown circuit to prevent overheating.
    • Use a pi-network or a T-network for input and output matching. The exact component values will depend on the specific application and frequency range. Consult the application note or a qualified RF engineer for guidance.
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