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    Part Img BFG425W,135 datasheet by NXP Semiconductors

    • NPN 25 GHz wideband transistor - @ f: 900 MHz; @ f1: 900 ; @ f2: 2000 ; @ I<sub>C</sub>: 25 mA; f<sub>T</sub>: 25 GHz; Frequency: 1.2 MHz; Gain @ 1.9 GHz: 28 dB; Gain @ 900 Mhz: 20@f2 dB; I<sub>C</sub>: 30 mA; ITO: 22 dBm; Noise figure: 0.8@f11.2@f2 dB; P<sub>L</sub>: 12 W; P<sub>tot</s; Package: SOT343R (CMPAK-4); Container: Tape reel smd
    • Original
    • Yes
    • Unknown
    • Obsolete
    • EAR99
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    BFG425W,135 datasheet preview

    BFG425W,135 Frequently Asked Questions (FAQs)

    • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the RF signal traces as short as possible and use 50-ohm impedance matching to minimize signal reflections.
    • Monitor the device's junction temperature, ensure the supply voltage is within the recommended range, and avoid operating the device near its maximum ratings for extended periods.
    • Ensure good thermal contact between the device and the heat sink, use a thermal interface material, and provide adequate airflow to keep the junction temperature below 150°C.
    • Use the device's built-in matching network and adjust the external matching components to achieve optimal impedance matching for the desired frequency band.
    • Use ESD protection devices, such as TVS diodes, and follow proper handling and storage procedures to prevent damage from electrostatic discharge.
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