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BF909WR,115
datasheet
by NXP Semiconductors
Description
N-channel dual-gate MOS-FET - CIS TYP: 3.6 pF; COS: 2.3 pF; I<sub>D</sub>: 40 mA; I<sub>DSS</sub>: 12 to 20 mA; I<sub>DSS</sub> min.: 2.3 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; V<sub>DS</sub>max: 7 V; Y<sub>FS</sub> min.: 36 mS; Package: SOT343R (CMPAK-4); Container: Tape reel smd
Datasheet Type
Original
RoHS
Yes
Pb Free
Unknown
Lifecycle
Obsolete
Price & Stock
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BF909WR,115
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