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    Part Img BF556AT/R datasheet by NXP Semiconductors

    • N-channel silicon junction field-effect transistors - CRS: 0.8 pF; I<sub>DSS</sub>: 3 to 7 mA; I<sub>G</sub>: 10 mA; Kind: DC, LF and HF amplifiers ; -V(P)GS: 0.5 to 7.5 V; V<sub>DS</sub>max: 30 V; Y<sub>FS</sub>: 4.5 ms
    • Original
    • Yes
    • Unknown
    • Obsolete
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