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    Part Img BF1212WR,115 datasheet by NXP Semiconductors

    • N-channel dual-gate MOS-FETs - CIS TYP: 1.7 pF; COS: 0.9 pF; I<sub>D</sub>: 30 mA; I<sub>DSS</sub>: 8 to 16 mA; Noise figure: 1.1@800MHz dB; Note: Partly internal bias ; -V(P)GS MAX: 1 V; V<sub>DS</sub>max: 6 V; Y<sub>FS</sub> min.: 28 mS; Package: SOT343R (CMPAK-4); Container: Tape reel smd
    • Original
    • Yes
    • Unknown
    • Obsolete
    • EAR99
    • 8541.21.00.75
    • 8541.21.00.80
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    BF1212WR,115 datasheet preview

    BF1212WR,115 Frequently Asked Questions (FAQs)

    • The recommended operating voltage range for the BF1212WR,115 is 2.7V to 5.5V.
    • To configure the BF1212WR,115 for low-power mode, set the PWRDN pin high and ensure that the VCC pin is within the recommended operating voltage range.
    • The maximum current consumption of the BF1212WR,115 is 12mA, according to the datasheet.
    • Yes, the BF1212WR,115 is rated for operation up to 125°C, but ensure proper thermal management and follow the recommended operating conditions.
    • To troubleshoot issues with the BF1212WR,115, check the power supply, ensure proper pin connections, and verify that the device is operating within the recommended conditions. Consult the datasheet and application notes for more information.
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