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    Part Img BF1101WR,115 datasheet by NXP Semiconductors

    • BF1101 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal
    • Original
    • Yes
    • Unknown
    • Obsolete
    • EAR99
    • 8541.21.00.75
    • 8541.21.00.80
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    BF1101WR,115 datasheet preview

    BF1101WR,115 Frequently Asked Questions (FAQs)

    • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the RF traces short and away from digital signals. Use a 50-ohm microstrip line for the RF output.
    • Use a 50-ohm antenna with a quarter-wavelength monopole or a dipole antenna. The antenna should be matched to the IC's output impedance. Consider using a balun or a transformer to improve impedance matching.
    • The BF1101WR,115 can handle up to 30 dBm (1W) of output power. However, the maximum power handling capability depends on the specific application, PCB design, and thermal management.
    • Use a thermal pad or a heat sink to dissipate heat. Ensure good airflow around the device. Follow the recommended operating conditions and derating guidelines in the datasheet.
    • Use ESD protection diodes or TVS diodes on the RF input and output pins. Ensure that the PCB design and layout minimize the risk of ESD damage. Follow the recommended ESD handling procedures during assembly and testing.
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