BAW101S datasheet by NXP Semiconductors

Description BAW101S - High voltage double diode - Cd max.: 2 pF; Configuration: dual isolated ; IF max: 250 mA; IFSM max: 4.5 A; IR max: 150@VR=250V nA; IFRM: 625 mA; trr max: 50 ns; VFmax: 1100@IF=100mA mV; VR max: 300 V
Datasheet Type Original
RoHS Yes
Pb Free Yes
Lifecycle Transferred
ECCN EAR99
HTS Code 8541.10.00.70
Schedule B 8541.10.00.70
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BAW101S

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