BAT854AWT/R datasheet by NXP Semiconductors

Description Schottky barrier (double) diodes - C<sub>d</sub> max.: 20@VR=1V pF; Configuration: dual c.a. ; I<sub>F</sub> max: 200 mA; I<sub>FSM</sub> max: 1000 A; I<sub>R</sub> max: 0.5@VR=25VA; V<sub>F</sub>max: 420@IF=10mA mV; V<sub>R</sub> max: 40 V
Datasheet Type Original
RoHS Yes
Pb Free Yes
Lifecycle Transferred
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Equivalent Parts !
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