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    Part Img BAS521,115 datasheet by NXP Semiconductors

    • High voltage switching diode - C<sub>d</sub> max.: 5 pF; Configuration: single ; I<sub>F</sub> max: 250 mA; I<sub>FSM</sub> max: 4.5 A; I<sub>R</sub> max: 150@VR=250V nA; IFRM: 1000 mA; t<sub>rr</sub> max: 50 ns; V<sub>F</sub>max: 1.1@IF=100mA mV; V<sub>R</sub> max: 300 V; Package: SOD523 (SC-79); Container: Tape reel smd
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
    • 8541.10.00.70
    • 8541.10.00.70
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    BAS521,115 datasheet preview

    BAS521,115 Frequently Asked Questions (FAQs)

    • A good PCB layout for the BAS521,115 should include a solid ground plane, wide traces for power and ground, and a thermal relief pattern under the device to facilitate heat dissipation.
    • To ensure reliable operation in high-temperature environments, ensure proper heat sinking, use a thermally conductive interface material, and consider derating the device's power handling according to the datasheet's thermal derating curve.
    • For EMI filtering and shielding, use a common-mode choke, add capacitors to filter out high-frequency noise, and ensure the device is properly shielded using a metal can or a shielded enclosure.
    • To optimize the device's performance for low-voltage applications, ensure the input voltage is within the recommended range, use a low-dropout voltage regulator, and consider using a voltage booster or charge pump if necessary.
    • Recommended test and measurement techniques include using a curve tracer or a semiconductor parameter analyzer to characterize the device's I-V curves, and using a thermal imaging camera to monitor the device's temperature.
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