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    Part Img BAS35,215 datasheet by NXP Semiconductors

    • General purpose controlled avalanche (double) diodes - C<sub>d</sub> max.: 35 pF; Configuration: dual c.a. ; I<sub>F</sub> max: 250 mA; I<sub>FSM</sub> max: 10 A; I<sub>R</sub> max: 100@VR=90V nA; IFRM: 600 mA; t<sub>rr</sub> max: 50 ns; V<sub>F</sub>max: 1@IF=200mA mV; V<sub>R</sub> max: 90 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
    • 8541.10.00.70
    • 8541.10.00.70
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    BAS35,215 datasheet preview

    BAS35,215 Frequently Asked Questions (FAQs)

    • The recommended operating temperature range for BAS35,215 is -40°C to 125°C, although it can withstand storage temperatures from -55°C to 150°C.
    • To ensure reliability in high-temperature applications, it's essential to follow proper derating guidelines, use a suitable thermal interface material, and ensure good thermal conduction to a heat sink or PCB.
    • The maximum allowable power dissipation for BAS35,215 is 250 mW, and it's essential to ensure that the device does not exceed this limit to prevent overheating and damage.
    • While BAS35,215 is primarily designed for linear applications, it can be used in switching applications with caution. However, it's essential to ensure that the device is properly biased and that the switching frequency is within the recommended range to prevent overheating and damage.
    • To handle ESD protection when working with BAS35,215, it's essential to follow proper ESD handling procedures, use ESD-protected workstations, and ensure that the device is properly grounded during handling and assembly.
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