BAS321T/R datasheet by NXP Semiconductors

Description General purpose diode - C<sub>d</sub> max.: 2 pF; Configuration: single ; I<sub>F</sub> max: 250 mA; I<sub>FSM</sub> max: 9 A; I<sub>R</sub> max: 100@VR=200V nA; IFRM: 625 mA; t<sub>rr</sub> max: 50 ns; V<sub>F</sub>max: 1@IF=100mA mV; V<sub>R</sub> max: 200 V
Datasheet Type Original
RoHS Yes
Pb Free Yes
Lifecycle Transferred
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