BAS316,115 datasheet by NXP Semiconductors

Description High-speed diode - C<sub>d</sub> max.: 1.5 pF; Configuration: single ; I<sub>F</sub> max: 250 mA; I<sub>FSM</sub> max: 4 A; I<sub>R</sub> max: 1000@VR=75V nA; IFRM: 500 mA; t<sub>rr</sub> max: 4 ns; V<sub>F</sub>max: 1@IF=50mA mV; V<sub>R</sub> max: 100 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd
Datasheet Type Original
RoHS Yes
Pb Free Unknown
Lifecycle Transferred
ECCN EAR99
HTS Code 8541.10.00.70
Schedule B 8541.10.00.70
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Equivalent Parts !
Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

934054945115 934054945115 BAS316,135 934054945135 BAS316/T3

BAS316,115 datasheet preview

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BAS316,115 Frequently Asked Questions (FAQs)

The recommended operating voltage range for BAS316,115 is 1.65 V to 5.5 V.
To ensure stability, it's recommended to use a minimum output capacitance of 1 μF and a maximum equivalent series resistance (ESR) of 1 Ω.
The maximum power dissipation for BAS316,115 is 250 mW.
Yes, BAS316,115 is rated for operation up to 125°C, but the output voltage may decrease at higher temperatures.
To minimize noise sensitivity, use a bypass capacitor (e.g., 10 nF) between the VIN pin and GND, and keep the layout as compact as possible.

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