Datasheet Archive: BAS21VD,165 datasheet by NXP Semiconductors

BAS21VD,165 datasheet by NXP Semiconductors

Description High-voltage switching diode array - Cd max.: 5 pF; Configuration: triple isolated ; IF max: 200 mA; IFSM max: 16 A; IR max: 100@VR=200V nA; IFRM: 1000 mA; trr max: 50 ns; VFmax: 1@IF=100mA mV; VR max: 200 V; Package: SOT457 (SC-74); Container: Tape reel smd, Reverse
Datasheet Type Original
RoHS Yes
Pb Free Unknown
Lifecycle Transferred
ECCN EAR99
HTS Code 8541.10.00.70
Schedule B 8541.10.00.70
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BAS21VD,165 datasheet preview

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The recommended operating temperature range for BAS21VD,165 is -40°C to 150°C, although it can withstand storage temperatures up to 200°C.
Yes, BAS21VD,165 is suitable for high-frequency applications up to 1 GHz due to its low capacitance and high switching speed.
To ensure reliability, follow proper handling and storage procedures, use a suitable PCB layout, and consider using a voltage regulator to prevent overvoltage conditions.
Yes, BAS21VD,165 is AEC-Q101 qualified, making it suitable for automotive applications, but ensure compliance with specific automotive industry standards and regulations.
The typical lead time for BAS21VD,165 varies depending on the region, distributor, and quantity. Check with authorized distributors or NXP Semiconductors for the most up-to-date lead time information.