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    Part Img BAS101,215 datasheet by NXP Semiconductors

    • High-voltage switching diodes - C<sub>d</sub> max.: 2 pF; Configuration: single ; I<sub>F</sub> max: 200 mA; I<sub>FSM</sub> max: 9 A; I<sub>R</sub> max: 150@VR=250V nA; IFRM: 1000 mA; t<sub>rr</sub> max: 50 ns; V<sub>F</sub>max: 1.1@IF=100mA mV; V<sub>R</sub> max: 300 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
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    BAS101,215 datasheet preview

    BAS101,215 Frequently Asked Questions (FAQs)

    • The recommended operating voltage range for BAS101 and BAS215 is 1.65 V to 5.5 V, although they can tolerate up to 6 V for short periods.
    • To avoid interference, ensure that the ESD protection diodes are not forward-biased during normal operation. This can be done by keeping the voltage on the protected lines within the recommended operating range and avoiding voltage transients that could forward-bias the diodes.
    • Yes, BAS101 and BAS215 can be used for high-frequency applications up to 1 GHz. However, the performance may degrade at higher frequencies due to the internal capacitance and inductance of the devices.
    • BAS101 has a lower capacitance (0.5 pF) and is suitable for high-speed applications, while BAS215 has a higher capacitance (1.5 pF) and is suitable for applications requiring higher ESD protection levels. Choose the device based on your specific application requirements.
    • Yes, BAS101 and BAS215 are qualified according to the AEC-Q101 standard, making them suitable for use in automotive applications.
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