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    Part Img AUIRFZ44VZS datasheet by International Rectifier

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 57A D2PAK
    • Original
    • Yes
    • Yes
    • Transferred
    • EAR99
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    AUIRFZ44VZS datasheet preview

    AUIRFZ44VZS Frequently Asked Questions (FAQs)

    • The maximum junction temperature for the AUIRFZ44VZS is 175°C. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
    • To calculate the power dissipation of the AUIRFZ44VZS, you need to know the drain-to-source on-state resistance (RDS(on)), the drain current (ID), and the voltage drop across the device (VDS). The power dissipation can be calculated using the formula: Pd = RDS(on) * ID^2 + VDS * ID.
    • The recommended gate drive voltage for the AUIRFZ44VZS is between 10V and 15V. However, the device can tolerate gate drive voltages up to 20V. It's essential to ensure that the gate drive voltage is within the recommended range to prevent damage to the device.
    • Yes, the AUIRFZ44VZS is suitable for high-frequency switching applications up to 1 MHz. However, it's essential to consider the device's switching characteristics, such as the rise and fall times, and the gate drive circuitry to ensure reliable operation.
    • To protect the AUIRFZ44VZS from overvoltage and overcurrent, you can use a combination of voltage regulators, current sensors, and protection circuits. It's also essential to ensure that the device is operated within its recommended specifications and to follow proper PCB design and layout practices.
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