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    Part Img AUIRF7103QTR datasheet by International Rectifier

    • FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 50V 3.0A 8SOIC
    • Original
    • Yes
    • Yes
    • Transferred
    • EAR99
    • Find it at Findchips.com

    AUIRF7103QTR datasheet preview

    AUIRF7103QTR Frequently Asked Questions (FAQs)

    • The maximum junction temperature (Tj) for the AUIRF7103QTR is 175°C. Exceeding this temperature can lead to device failure or reduced lifespan.
    • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 1°C/W, and ensuring good thermal contact between the device and the heat sink. Additionally, keeping the ambient temperature below 50°C can help reduce thermal stress on the device.
    • The recommended gate drive voltage for the AUIRF7103QTR is between 10V and 15V. Using a gate drive voltage outside of this range can affect the device's performance and reliability.
    • Yes, the AUIRF7103QTR is suitable for high-frequency switching applications up to 1MHz. However, it's essential to consider the device's switching losses, gate drive requirements, and thermal management when designing the application.
    • To protect the AUIRF7103QTR from overvoltage and overcurrent conditions, use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.
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