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    Part Img AUIRF3805S datasheet by International Rectifier

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 55V 160A D2PAK
    • Original
    • Yes
    • Yes
    • Transferred
    • EAR99
    • Find it at Findchips.com

    AUIRF3805S datasheet preview

    AUIRF3805S Frequently Asked Questions (FAQs)

    • The maximum junction temperature (Tj) for the AUIRF3805S is 175°C. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to ensure a long lifespan.
    • To calculate the power dissipation of the AUIRF3805S, you need to consider the voltage drop across the device (Vds) and the current flowing through it (Ids). The power dissipation (Pd) can be calculated using the formula: Pd = Vds x Ids. Additionally, you should also consider the thermal resistance (Rth) of the device and the ambient temperature (Ta) to ensure that the junction temperature remains within the safe operating range.
    • The recommended PCB layout for the AUIRF3805S involves using a copper pour on the top and bottom layers to dissipate heat, and keeping the high-current paths as short as possible. It's also recommended to use a thermal relief pattern on the pads to prevent thermal stress. Additionally, ensure that the PCB is designed to handle the high voltage and current ratings of the device.
    • Yes, the AUIRF3805S is suitable for high-frequency switching applications up to 1 MHz. However, you need to ensure that the device is properly snubbed to prevent ringing and oscillations. Additionally, you should also consider the gate drive requirements and the layout of the PCB to minimize parasitic inductance and capacitance.
    • To protect the AUIRF3805S from overvoltage and overcurrent, you can use a combination of voltage regulators, current sensors, and protection circuits. Additionally, you can also use a fuse or a circuit breaker to disconnect the power supply in case of an overcurrent condition. It's also recommended to use a TVS (Transient Voltage Suppressor) diode to protect the device from voltage spikes and transients.
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