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    AUIRF2907ZS-7P datasheet by International Rectifier

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 180A D2PAK-7
    • Original
    • Yes
    • Yes
    • Transferred
    • EAR99
    • Find it at Findchips.com

    AUIRF2907ZS-7P datasheet preview

    AUIRF2907ZS-7P Frequently Asked Questions (FAQs)

    • The maximum junction temperature for the AUIRF2907ZS-7P is 175°C. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to ensure a long lifespan.
    • Yes, the AUIRF2907ZS-7P is suitable for high-frequency switching applications up to 1 MHz. However, it's essential to consider the device's switching losses, gate drive requirements, and layout considerations to ensure reliable operation.
    • To ensure proper cooling, it's recommended to use a heat sink with a thermal resistance of less than 1°C/W. Additionally, ensure good thermal contact between the device and the heat sink, and consider using thermal interface materials if necessary.
    • The recommended gate drive voltage for the AUIRF2907ZS-7P is between 10 V and 15 V. However, it's essential to ensure that the gate drive voltage is within the specified range to avoid damage to the device.
    • Yes, the AUIRF2907ZS-7P can be used in a parallel configuration to increase current handling. However, it's essential to ensure that the devices are properly matched, and the gate drive and layout are designed to minimize current imbalance and oscillations.
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