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    Part Img AUIRF2805STRL datasheet by International Rectifier

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 55V 135A D2PAK
    • Original
    • Yes
    • Yes
    • Transferred
    • EAR99
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    AUIRF2805STRL datasheet preview

    AUIRF2805STRL Frequently Asked Questions (FAQs)

    • The maximum junction temperature of AUIRF2805STRL is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation and to ensure a longer lifespan.
    • To calculate the power dissipation of AUIRF2805STRL, you need to know the drain-source on-resistance (RDS(on)), the drain current (ID), and the voltage drop across the device (VDS). The power dissipation can be calculated using the formula: Pd = RDS(on) * ID^2 + VDS * ID. You can find the RDS(on) and VDS values in the datasheet.
    • The recommended PCB layout for AUIRF2805STRL involves keeping the high-current paths short and wide, using multiple vias to connect the drain and source pins to the PCB, and ensuring good thermal conductivity to dissipate heat. It's also recommended to follow the layout guidelines provided in the datasheet and application notes.
    • Yes, AUIRF2805STRL is suitable for high-frequency switching applications up to 1 MHz. However, you need to ensure that the device is properly biased, and the PCB layout is optimized for high-frequency operation. You should also consider the device's switching characteristics, such as the rise and fall times, and the gate charge.
    • To protect AUIRF2805STRL from overvoltage and overcurrent, you can use a combination of voltage regulators, current sensors, and protection circuits. You should also ensure that the device is operated within its specified voltage and current ratings, and that the PCB layout is designed to minimize the risk of electrical overstress.
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