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    Part Img AUIRF2804 datasheet by International Rectifier

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 195A TO220AB
    • Original
    • Yes
    • Yes
    • Transferred
    • EAR99
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    AUIRF2804 datasheet preview

    AUIRF2804 Frequently Asked Questions (FAQs)

    • The maximum junction temperature (Tj) for the AUIRF2804 is 175°C. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to ensure a long lifespan.
    • To calculate the power dissipation of the AUIRF2804, you need to consider the voltage drop across the device, the current flowing through it, and the thermal resistance. The formula is: Pd = (Vds * Ids) + (Vgs * Igs) + (Rth * Tj), where Pd is the power dissipation, Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, Igs is the gate-source current, Rth is the thermal resistance, and Tj is the junction temperature.
    • For optimal performance and thermal management, it's recommended to follow a 2-layer or 4-layer PCB layout with a solid ground plane, and to place the device near a heat sink or a thermal pad. The drain and source pins should be connected to the PCB with a low-inductance path, and the gate pin should be connected to a low-impedance driver.
    • Yes, the AUIRF2804 is suitable for high-frequency switching applications up to 1 MHz. However, you need to ensure that the device is properly driven and that the PCB layout is optimized for high-frequency operation. You should also consider the device's switching losses, gate charge, and thermal management.
    • To protect the AUIRF2804 from overvoltage and overcurrent, you can use a combination of voltage regulators, current sensors, and protection circuits. You should also ensure that the device is operated within its recommended operating conditions and that the PCB layout is designed to minimize parasitic inductance and capacitance.
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