GENERAL PURPOSE DUAL-GATE GaAS MESFET
FEATURES
SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER LOW C r s s : 0.02 pF (TYP) HIGH GPS: 20 dB (TYP) AT 900 MHz LOW NF: 1.1 dB TYP AT 900 MHz
Lgi = 1 .0 |im
Scan
Unknown
Unknown
Obsolete
Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
