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    • PRELIMINARY DATA SHEET 1W, L/S-BAND MEDIUM POWER GaAs HJ-FET FEATURES LOW COST PLASTIC SURFACE MOUNT PACKAGE HIGH OUTPUT POWER: +31.5 dBm TYP @ Vds = 3.5 V, Idsq = 150 mA, 1 = 850 MHz, Pin = +20
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    NE6510179A
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