PRELIMINARY DATA SHEET
NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR
FEATURES
LOW NOISE: NF = 1.3 dB TYP at f = 2 GHz, V ce = 2 V, Ic = 3 mA HIGH GAIN: IS21 EI2 = 8.5 dB TYP at f = 2 GHz, Vce = 2 V,
Scan
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Obsolete
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