This site uses third-party website tracking technologies to provide and continually improve our services, and to display advertisements according to users' interests. I agree and may revoke or change my consent at any time with effect for the future.
600V N-Channel MOSFET
Features
Description
⢠6.26A, 600V, RDS(on) = 1.5 ⦠@VGS = 10 V
These N-Channel enhancement mode power field effect transistors are produced using Fairchildâs pro
