PRELIMINARY DATA SHEET
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
FEATURES
· · HIGH GAIN:
|S 21 e|2 = 12 dB TYP, at f = 1 G Hz, V ce =10 V, Ic = 20 m A
NE856M02
Scan
Unknown
Unknown
Obsolete
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