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Partial File Text PRELIMINARY DATA SHEET 1W, L/S-BAND MEDIUM POWER GaAs HJ-FET FEATURES LOW COST PLASTIC SURFACE MOUNT PACKAGE HIGH OUTPUT POWER: +31.5 dBm TYP @ V d s = 3.5 V, Id s q = 150 mA, f = 850 MHz, Pin =
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NE6510179A NEC k 1760