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    • MwT-A9 M ic r o w a v e 18 GHz High Gain, Low Noise GaAs FET tec h no lo g y ri p • ■ 'f +24.5 dBm OUTPUT POWER AT 12 GHz 9 dB SMALL SIGNAL GAIN AT 12 GHz 1.6 dB NOISE FIGURE AT
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