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DSAH00210767.pdf
by Infineon Technologies
Partial File Text
P-HEMT Preliminary Data Sheet Low noise figure and high associated gain for high IP3 receiver stages up to 4 GHz ยท Suitable for PCS CDMA and UMTS applications (F = 0.52 dB; GA = 15.2 dB @ 3 V; 20 mA;
Datasheet Type
Original
RoHS
Unknown
Pb Free
Unknown
Lifecycle
Unknown
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