DSAH00215006.pdf by International Rectifier

Partial File Text IRGP4062-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features · · · · · · · · · Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 S short circuit SOA Square R
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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