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    DSAISS00017665.pdf by Infineon Technologies

    • GaAlAs-Lumineszenzdiode GaAlAs Infrared Emitter SFH 460 Wesentliche Merkmale • Hergestellt im Schmezepitaxieverfahren • Kathode galvanisch mit dem Gehäuseboden verbunden • Hohe ZuverlÃ
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