NPN EPITAXIAL
TIP100/101/102
SILICON DARLINGTON TRANSISTOR
HIGH DC CURRENT GAIN
MIN hFE=1000 @ V ce=4V, lc=3A
LOW COLLECTOR-EMITTER
SATURATION VOLTAGE
MONOLITHIC CONSTRUCTION WITH BUILT
IN BAS
Scan
Unknown
Unknown
Obsolete
Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
DSAIHSC000130244.pdf
by Not Available
