DSAISS00018243.pdf by Infineon Technologies

Partial File Text BSC010NE2LSI OptiMOSTM Power-MOSFET Product Summary Features VDS 100 A 38 nC QG(0V..10V) â¢ 100% avalanche tested mW QOSS â¢ Very low on-resistance R DS(on) @
Datasheet Type Original
RoHS Yes
Pb Free Yes
Lifecycle Not Recommended
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BSC010NE2LSI

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