This site uses third-party website tracking technologies to provide and continually improve our services, and to display advertisements according to users' interests. I agree and may revoke or change my consent at any time with effect for the future.
PNP EPITAXIAL
TIP145/146/ 147
SILICON DARLINGTON TRANSISTOR
HIGH DC CURRENT GAIN
M INh FE = 1000 @ V CE = -4V, IC = -5A
MONOLITHIC CONSTRUCTION WITH BUILT
IN BASE-EMITTER SHUNT RESISTORS
INDUST
