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    DSA00207325.pdf by IXYS

    • High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM VCES = 1700 V = 75 A IC25 VCE(sat) = 3.6 V IXBH 42N170 IXBT 42N170 Symbol Test Conditions Maximum Ratings
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